FQB2N80TM ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQB2N90 ,900V N-Channel MOSFET
FQB2N90TM ,900V N-Channel QFET
FQB2NA90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, R = 5.8 Ω @ V = 10 VDS(on ..
FQB2NA90TM ,900V N-Channel QFETSeptember 2000TMQFET QFET QFET QFETFQB2NA90 / FQI2NA90900V N-Channel MOSFET
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G6A-274P-ST-US , Fullly Sealed Relay with High Impulse Withstand
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
FQB2N80TM
800V N-Channel QFET
September 2000 TM QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D D ! ! "" 33 55 "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB2N80 / FQI2N80 Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25°C) Drain Current 2.4 A D C - Continuous (T = 100°C) 1.52 A C I (Note 1) Drain Current - Pulsed 9.6 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 180 mJ AS I Avalanche Current (Note 1) 2.4 A AR E Repetitive Avalanche Energy (Note 1) 8.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns Power Dissipation (T = 25°C) * P 3.13 W A D Power Dissipation (T = 25°C) 85 W C - Derate above 25°C 0.68 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.47 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, September 2000 FQB2N80 / FQI2N80
