FQB2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQB2N80TM ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQB2N90 ,900V N-Channel MOSFET
FQB2N90TM ,900V N-Channel QFET
G6A-274P-ST-US , Fullly Sealed Relay with High Impulse Withstand
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
FQB2N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQB2N60 / FQI2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D D ! ! "" !!"" "" G! ! G S "" 2 2 D -PAK I -PAK G D S FQB Series FQI Series ! ! S Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQB2N60 / FQI2N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 2.4 A D C - Continuous (T = 100°C) 1.5 A C I (Note 1) Drain Current - Pulsed 9.6 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 140 mJ AS I Avalanche Current (Note 1) 2.4 A AR E (Note 1) Repetitive Avalanche Energy 6.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 64 W C - Derate above 25°C 0.51 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.95 °C�W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C�W θJA R � Thermal Resistance, Junction-to-Ambient -- 62.5 °C W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQB2N60 / FQI2N60
