FQB27P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -27A, -60V, R = 0.07Ω @V = -10 VDS(on ..
FQB28N15 ,150V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching for DC/DC converters,DC motor contr ..
FQB2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQB2N80TM ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
G6A-274P-ST-US , Fullly Sealed Relay with High Impulse Withstand
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
FQB27P06
60V P-Channel MOSFET
FQB27P06 / FQI27P06 May 2001 TM QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -27A, -60V, R = 0.07Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand a high energy pulse in the • Improved dv/dt capability avalanche and commutation modes. These devices are • 175°C maximum junction temperature rating well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S D !!!!!!!! ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G S 2 2 D -PAK I -PAK G D S !!!! !!!! FQB Series FQI Series D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB27P06 / FQI27P06 Units V Drain-Source Voltage -60 V DSS I - Continuous (T = 25°C) Drain Current -27 A D C - Continuous (T = 100°C) -19.1 A C I (Note 1) Drain Current - Pulsed -108 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 560 mJ AS I Avalanche Current (Note 1) -27 A AR E (Note 1) Repetitive Avalanche Energy 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 120 W C - Derate above 25°C 0.8 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.25 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A2. May 2001
