FQB22P10TM ,100V P-Channel QFETFQB22P10 / FQI22P10TMQFETFQB22P10 / FQI22P10100V P-Channel MOSFET
FQB22P10TM ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -22A, -100V, R = 0.125Ω @V = -10 VDS( ..
FQB24N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB27P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -27A, -60V, R = 0.07Ω @V = -10 VDS(on ..
FQB28N15 ,150V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching for DC/DC converters,DC motor contr ..
FQB2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
G6A-274P-ST-US , Fullly Sealed Relay with High Impulse Withstand
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
FQB22P10TM
100V P-Channel QFET
FQB22P10 / FQI22P10 TM QFET FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -22A, -100V, R = 0.125Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 160 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D D G GS 2 2 D -PAK I -PAK GS D FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB22P10 / FQI22P10 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25°C) Drain Current -22 A D C - Continuous (T = 100°C) -15.6 A C I Drain Current - Pulsed (Note 1) -88 A DM V Gate-Source Voltage ±30 V GSS E Single Pulsed Avalanche Energy (Note 2) 710 mJ AS I Avalanche Current (Note 1) -22 A AR E Repetitive Avalanche Energy (Note 1) 12.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt -6.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 125 W C - Derate above 25°C 0.83 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.2 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Rev. C, August 2002
