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FQB1N60TM
600V N-Channel QFET
April 2000 TM QFET QFET QFET QFET FQB1N60 / FQI1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.2A, 600V, R = 11.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D D ! ! "" !!"" "" G! ! G S "" 2 2 D -PAK I -PAK G D S FQB Series FQI Series ! ! S Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQB1N60 / FQI1N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 1.2 A D C - Continuous (T = 100°C) 0.76 A C I (Note 1) Drain Current - Pulsed 4.8 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 50 mJ AS I Avalanche Current (Note 1) 1.2 A AR E (Note 1) Repetitive Avalanche Energy 4.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 40 W C - Derate above 25°C 0.32 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.13 °C�W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C�W θJA R � Thermal Resistance, Junction-to-Ambient -- 62.5 °C W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQB1N60 / FQI1N60
