FQB19N10LTM ,100V N-Channel Logic Level QFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D D! !""!!"""" ..
FQB19N10TM ,100V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 19A, 100V, R = 0.1Ω @V = 10 VDS(on) G ..
FQB19N10TM ,100V N-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQB19N20TM ,200V N-Channel QFET
FQB1N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.2A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
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FQB19N10LTM
100V N-Channel Logic Level QFET
August 2000 TM QFET QFET QFET QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19A, 100V, R = 0.1Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB19N10L / FQI19N10L Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 19 A D C - Continuous (T = 100°C) 13.5 A C I (Note 1) Drain Current - Pulsed 76 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 220 mJ AS I Avalanche Current (Note 1) 19 A AR E (Note 1) Repetitive Avalanche Energy 7.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 75 W C - Derate above 25°C 0.5 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQB19N10L / FQI19N10L
