FQB16N25C ,250V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 15.6A, 250V, R = 0.27Ω @V = 10 VDS(on ..
FQB16N25TM ,250V N-Channel QFET
FQB16N25TM ,250V N-Channel QFET
FQB17N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor contro ..
FQB17N08L ,80V LOGIC N-Channel MOSFETapplications such as automotive, Low level gate drive requirements allowinghigh efficiency switchi ..
FQB17N08TM ,80V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, R = 0.115Ω @V = 10 VDS(on ..
G696H263T1Uf ,mode Technology Inc - Microprocessor Reset IC
G696L263T1UF ,mode Technology Inc - Microprocessor Reset IC
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G697L293T1UF ,mode Technology Inc - Microprocessor Reset IC
G697L330T1U ,mode Technology Inc - Microprocessor Reset IC
FQB16N25C
250V N-Channel Advance Q-FET C-Series
FQB16N25C/FQI16N25C ® QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.6A, 250V, R = 0.27Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar stripe, DMOS technology. • Low Crss ( typical 68 pF) This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D {{ D ●● ◀◀ ▲▲ ●● G{{ ●● 2 2 I -PAK D -PAK GS FQI Series FQB Series GS D {{ S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB16N25C / FQI16N25C Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 15.6 A D C - Continuous (T = 100°C) 9.8 A C I Drain Current - Pulsed (Note 1) 62.4 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 410 mJ AS I Avalanche Current (Note 1) 15.6 A AR E Repetitive Avalanche Energy (Note 1) 13.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C)* 3.13 W A P Power Dissipation (T = 25°C) 139 W D C - Derate above 25°C 1.11 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.9 °C/W θJC R Thermal Resistance, Junction-to-Ambient* -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2004 Rev. A, March 2004
