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FQB13N50C-FQB13N50CTM
500V N-Channel Advance Q-FET C-Series
FQB13N50C/FQI13N50C TM QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, R = 0.48Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ! ! D "" !!"" "" G! ! "" 2 2 I -PAK D -PAK GS FQI Series ! ! FQB Series GS D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB13N50C / FQI13N50C Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 13 A D C - Continuous (T = 100°C) 8A C I (Note 1) Drain Current - Pulsed 52 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 860 mJ AS I Avalanche Current (Note 1) 13 A AR E (Note 1) Repetitive Avalanche Energy 19.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 195 W D C - Derate above 25°C 1.56 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.64 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minium pad size recommended (PCB Mount). ©2003 Rev. A, October 2003
