FQB13N06LTM ,60V N-Channel Logic level QFETFeaturesThese N-Channel enhancement mode power field effect • 13.6A, 60V, R = 0.11Ω @V = 10 VDS(on) ..
FQB13N06LTM ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB13N06TM ,60V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 13A, 60V, R = 0.135Ω @V = 10 VDS(on) ..
FQB13N10LTM ,100V N-Channel Logic Level QFETapplications such as highefficiency switching DC/DC converters, and DC motorcontrol.D D! !""!!""""G ..
FQB13N10TM ,100V N-Channel QFETapplications such as audioamplifier, high efficiency switching DC/DC converters, andDC motor contro ..
FQB13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13A, 500V, R = 0.48Ω @V = 10 VDS(on) ..
G696H263T1Uf ,mode Technology Inc - Microprocessor Reset IC
G696L263T1UF ,mode Technology Inc - Microprocessor Reset IC
G697L263T1U ,mode Technology Inc - Microprocessor Reset IC
G697L263T1UF ,mode Technology Inc - Microprocessor Reset IC
G697L293T1UF ,mode Technology Inc - Microprocessor Reset IC
G697L330T1U ,mode Technology Inc - Microprocessor Reset IC
FQB13N06LTM
60V N-Channel Logic level QFET
FQB13N06L / FQI13N06L May 2001 TM QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.6A, 60V, R = 0.11Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D D ! ! "" !!"" "" G! ! "" G S 2 2 I -PAK D -PAK G D S ! ! FQI Series FQB Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB13N06L / FQI13N06L Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 13.6 A D C - Continuous (T = 100°C) 9.6 A C I (Note 1) Drain Current - Pulsed 54.4 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 90 mJ AS I Avalanche Current (Note 1) 13.6 A AR E (Note 1) Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 45 W C - Derate above 25°C 0.3 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.35 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
