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FQB12N60C
600V N-Channel Advance QFET C-Series
FQB12N60C / FQI12N60C TM QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12A, 600V, R = 0.65Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 21 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! 2 ● ● ● ● ● ● ● ● 2 I -PAK D -PAK GS FQI Series FQB Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB12N60C / FQI12N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 12 A D C - Continuous (T = 100°C) 7.4 A C I (Note 1) Drain Current - Pulsed 48 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 870 mJ AS I Avalanche Current (Note 1) 12 A AR E Repetitive Avalanche Energy (Note 1) 22.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C) 3.13 W A P Power Dissipation (T = 25°C) 225 W D C - Derate above 25°C 1.78 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.56 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, October 2003
