FQB12N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 11.6A, 200V, R = 0.28Ω @V = 10 VDS(on ..
FQB12N50 ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.1A, 500V, R = 0.49Ω @V = 10 VDS(on ..
FQB12N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.65Ω @V = 10 VDS(on) ..
FQB12P10TM ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB12P20 ,200V P-Channel MOSFETMay 2000TMQFET QFET QFET QFETFQB12P20 / FQI12P20200V P-Channel MOSFET
FQB12P20TM ,200V P-Channel QFETMay 2000TMQFET QFET QFET QFETFQB12P20 / FQI12P20200V P-Channel MOSFET
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
G691L308T72 ,mode Technology Inc - Microprocessor Reset IC
G691L308T73 ,mode Technology Inc - Microprocessor Reset IC
G696H263T1Uf ,mode Technology Inc - Microprocessor Reset IC
G696L263T1UF ,mode Technology Inc - Microprocessor Reset IC
FQB12N20L
200V LOGIC N-Channel MOSFET
FQB12N20L / FQI12N20L February 2001 FQB12N20L / FQI12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.6A, 200V, R = 0.28Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB12N20L / FQI12N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 11.6 A D C - Continuous (T = 100°C) 7.35 A C I (Note 1) Drain Current - Pulsed 46.4 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 210 mJ AS I Avalanche Current (Note 1) 11.6 A AR E (Note 1) Repetitive Avalanche Energy 9.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.5 W P A D Power Dissipation (T = 25°C) 90 W C - Derate above 25°C 0.72 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.39 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1, February 2001
