FQB11P06TM ,60V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -11.4A, -60V, R = 0.175Ω @V = -10 VDS ..
FQB12N20 ,200V N-Channel MOSFET
FQB12N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 11.6A, 200V, R = 0.28Ω @V = 10 VDS(on ..
FQB12N50 ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.1A, 500V, R = 0.49Ω @V = 10 VDS(on ..
FQB12N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.65Ω @V = 10 VDS(on) ..
FQB12P10TM ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
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G691L308T72 ,mode Technology Inc - Microprocessor Reset IC
G691L308T73 ,mode Technology Inc - Microprocessor Reset IC
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FQB11P06TM
60V P-Channel QFET
FQB11P06 / FQI11P06 ® QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.4A, -60V, R = 0.175Ω @V = -10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are 175°C maximum junction temperature rating well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S !!!!!!!! D ● ●● ● ● ●● ● G!!!!!!!! ● ● ● ●● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲▲▲▲▲▲▲▲ ● ●● ● ● ●● ● 2 2 I -PAK D -PAK GS FQI Series FQB Series GS D !!!!!!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB11P06 / FQI11P06 Units V Drain-Source Voltage -60 V DSS I - Continuous (T = 25°C) Drain Current -11.4 A D C - Continuous (T = 100°C) -8.05 A C I (Note 1) Drain Current - Pulsed -45.6 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 160 mJ AS I Avalanche Current (Note 1) -11.4 A AR E (Note 1) Repetitive Avalanche Energy 5.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 53 W C - Derate above 25°C 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.85 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2004 Rev. B5, March 2004
