FQB11N40CTM ,400V N-Channel Advance Q-FET C-SeriesFQB11N40C/FQI11N40C ®QFETFQB11N40C/FQI11N40C400V N-Channel MOSFET
FQB11N40TM ,400V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 11.4A, 400V, R = 0.48Ω @V = 10 VDS(on ..
FQB11P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -11.4A, -60V, R = 0.175Ω @V = -10 VDS ..
FQB11P06TM ,60V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -11.4A, -60V, R = 0.175Ω @V = -10 VDS ..
FQB12N20 ,200V N-Channel MOSFET
FQB12N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 11.6A, 200V, R = 0.28Ω @V = 10 VDS(on ..
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
G691L308T72 ,mode Technology Inc - Microprocessor Reset IC
G691L308T73 ,mode Technology Inc - Microprocessor Reset IC
FQB11N40C-FQB11N40CTM
400V N-Channel Advance Q-FET C-Series
FQB11N40C/FQI11N40C ® QFET FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 85pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D ! ! "" !!"" 2 "" 2 ! ! I -PAK G "" D -PAK GS FQI Series FQB Series GS D ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB11N40C / FQI11N40C Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 10.5 A D C - Continuous (T = 100°C) 6.6 A C I (Note 1) Drain Current - Pulsed 42 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 360 mJ AS I Avalanche Current (Note 1) 11 A AR E Repetitive Avalanche Energy (Note 1) 13.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 135 W D C - Derate above 25°C 1.07 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case - 0.93 °C/W θJC R Thermal Resistance, Junction-to-Ambient * - 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient - 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2004 Rev. A, January 2004
