FQB10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQB11N40 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 11.4A, 400V, R = 0.48Ω @V = 10 VDS(on ..
FQB11N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQB11N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQB11N40CTM ,400V N-Channel Advance Q-FET C-SeriesFQB11N40C/FQI11N40C ®QFETFQB11N40C/FQI11N40C400V N-Channel MOSFET
FQB11N40TM ,400V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 11.4A, 400V, R = 0.48Ω @V = 10 VDS(on ..
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
G691L308T72 ,mode Technology Inc - Microprocessor Reset IC
G691L308T73 ,mode Technology Inc - Microprocessor Reset IC
FQB10N60C
600V N-Channel Advance Q-FET C-Series
FQB10N60C / FQI10N60C TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 600V, R = 0.73Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● !!!! G!!!! 2 ● ● ● ● ● ● ● ● 2 I -PAK D -PAK GS FQI Series FQB Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB10N60C / FQI10N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 9.5 A D C - Continuous (T = 100°C) 3.3 A C I (Note 1) Drain Current - Pulsed 38 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 700 mJ AS I Avalanche Current (Note 1) 9.5 A AR E Repetitive Avalanche Energy (Note 1) 15.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C)* 3.13 W A P Power Dissipation (T = 25°C) 156 W D C - Derate above 25°C 1.25 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.8 °C/W θJC R Thermal Resistance, Junction-to-Ambient* -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, October 2003
