FQB10N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 10A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQB10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQB11N40 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 11.4A, 400V, R = 0.48Ω @V = 10 VDS(on ..
FQB11N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQB11N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQB11N40CTM ,400V N-Channel Advance Q-FET C-SeriesFQB11N40C/FQI11N40C ®QFETFQB11N40C/FQI11N40C400V N-Channel MOSFET
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
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G691L308T72 ,mode Technology Inc - Microprocessor Reset IC
G691L308T73 ,mode Technology Inc - Microprocessor Reset IC
FQB10N20L
200V LOGIC N-Channel MOSFET
FQB10N20L / FQI10N20L December 2000 TM QFET QFET QFET QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 200V, R = 0.36Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB10N20L / FQI10N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 10 A D C - Continuous (T = 100°C) 6.3 A C I (Note 1) Drain Current - Pulsed 40 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 180 mJ AS I Avalanche Current (Note 1) 10 A AR E (Note 1) Repetitive Avalanche Energy 8.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 87 W C - Derate above 25°C 0.7 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.44 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
