FQAF7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.7A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQAF7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.2A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQAF9N50 ,500V N-Channel MOSFET
FQAF9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.9A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
FQAF9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -7.1A, -250V, R = 0.62Ω @V = -10 VDS( ..
FQB10N20C ,200V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
G690H263T73 ,mode Technology Inc - Microprocessor Reset IC
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G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
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FQAF7N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQAF7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.7A, 600V, R = 1.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" TO-3PF ! ! G D S S FQAF Series Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQAF7N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 5.7 A D C - Continuous (T = 100°C) 3.6 A C I (Note 1) Drain Current - Pulsed 22.8 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 580 mJ AS I Avalanche Current (Note 1) 5.7 A AR E (Note 1) Repetitive Avalanche Energy 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 83 W D C - Derate above 25°C 0.66 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.5 °C�W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQAF7N60
