FQAF70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF70N15 ,N-Channel Power MOSFET
FQAF7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.7A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQAF7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.2A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQAF9N50 ,500V N-Channel MOSFET
FQAF9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.9A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
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FQAF70N10
100V N-Channel MOSFET
August 2000 TM QFET QFET QFET QFET FQAF70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 45A, 100V, R = 0.023Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" TO-3PF G ! ! D S FQAF Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQAF70N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 45 A D C - Continuous (T = 100°C) 31.8 A C I (Note 1) Drain Current - Pulsed 180 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1300 mJ AS I Avalanche Current (Note 1) 45 A AR E (Note 1) Repetitive Avalanche Energy 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 100 W D C - Derate above 25°C 0.67 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2000 Fairchild Semiconductor International Rev. B, August 2000 FQAF70N10
