FQAF34N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 21.7A, 250V, R = 0.085Ω @V = 10 VDS(o ..
FQAF47P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -38A, -60V, R = 0.026Ω @V = -10 VDS(o ..
FQAF65N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQAF70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF70N15 ,N-Channel Power MOSFET
FQAF7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.7A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
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G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
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FQAF34N25
250V N-Channel MOSFET
FQAF34N25 October 2001 FQAF34N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 21.7A, 250V, R = 0.085Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-3PF !!!!!!!! GS D FQAF Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQAF34N25 Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 21.7 A D C - Continuous (T = 100°C) 13.7 A C I (Note 1) Drain Current - Pulsed 86.8 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 700 mJ AS I Avalanche Current (Note 1) 21.7 A AR E (Note 1) Repetitive Avalanche Energy 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns P Power Dissipation (T = 25°C) 100 W D C - Derate above 25°C 0.8 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.25 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. A, October 2001
