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FQAF19N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQAF19N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 600V, R = 0.38 Ω @ V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" TO-3PF ! ! G D S S FQAF Series Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQAF19N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 11.2 A D C - Continuous (T = 100°C) 7.0 A C I (Note 1) Drain Current - Pulsed 44.8 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1150 mJ AS I Avalanche Current (Note 1) 11.2 A AR E (Note 1) Repetitive Avalanche Energy 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 � V ns P Power Dissipation (T = 25°C) 120 W D C - Derate above 25°C 0.96 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.04 °C�W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQAF19N60
