FQAF17P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF19N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 11.2A, 600V, R = 0.38 Ω @ V = 10 VDS( ..
FQAF27N25 ,250V N-Channel MOSFET
FQAF28N15 ,150V N-Channel MOSFET
FQAF33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF34N20 ,200V N-Channel MOSFET
G690H263T73 ,mode Technology Inc - Microprocessor Reset IC
G690L263T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
FQAF17P10
100V P-Channel MOSFET
FQAF17P10 TM QFET FQAF17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -12.4A, -100V, R = 0.19Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G TO-3PF GS D FQAF Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQAF17P10 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25°C) Drain Current -12.4 A D C - Continuous (T = 100°C) -8.8 A C I (Note 1) Drain Current - Pulsed -49.6 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 580 mJ AS I Avalanche Current (Note 1) -12.4 A AR E (Note 1) Repetitive Avalanche Energy 5.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P Power Dissipation (T = 25°C) 56 W D C - Derate above 25°C 0.37 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.68 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2002 Rev. B, August 2002
