FQA9N90C ,900V N-Channel Q-FETFQA9N90CTMQFETFQA9N90C900V N-Channel MOSFET
FQA9N90C_F109 ,N-Channel QFET?MOSFET 900V, 9.0A, 1.4?Features• 9 A, 900 V, R = 1.4 Ω (Max.) @ V = 10 V, I = 4.5 A This N-Channel enhancement mode power ..
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FQAF13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 800V, R = 0.75Ω @V = 10 VDS(on) ..
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FQA9N90C
900V N-Channel Q-FET
FQA9N90C TM QFET FQA9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9A, 900V, R = 1.4Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-3P !!!! FQA Series !!!! GS D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA9N90C Units V Drain-Source Voltage 900 V DSS I - Continuous (T = 25°C) Drain Current 9.0 A D C - Continuous (T = 100°C) 5.7 A C I (Note 1) Drain Current - Pulsed 36.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 900 mJ AS I Avalanche Current (Note 1) 9.0 A AR E (Note 1) Repetitive Avalanche Energy 28 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25°C) 280 W D C - Derate above 25°C 2.22 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.45 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2003 Rev. A, March 2003
