FQA9N90C_F109 ,N-Channel QFET?MOSFET 900V, 9.0A, 1.4?Features• 9 A, 900 V, R = 1.4 Ω (Max.) @ V = 10 V, I = 4.5 A This N-Channel enhancement mode power ..
FQAF10N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.7A, 800V, R = 1.05Ω @V = 10 VDS(on) ..
FQAF12P20 ,200V P-Channel MOSFETMay 2000TMQFET QFET QFET QFETFQAF12P20200V P-Channel MOSFET
FQAF13N50 ,500V N-Channel MOSFET
FQAF13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 800V, R = 0.75Ω @V = 10 VDS(on) ..
FQAF14N30 ,300V N-Channel MOSFET
G690H263T73 ,mode Technology Inc - Microprocessor Reset IC
G690L263T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
FQA9N90C_F109
N-Channel QFET?MOSFET 900V, 9.0A, 1.4?
® FQA9N90C_F109 N-Channel QFET MOSFET April 2013 FQA9N90C_F109 ® N-Channel QFET MOSFET 900 V, 9 A, 1.4 Ω Description Features • 9 A, 900 V, R = 1.4 Ω (Max.) @ V = 10 V, I = 4.5 A This N-Channel enhancement mode power MOSFET is DS(on) GS D ® produced using Fairchild Semiconductor ’s proprietary planar • Low Gate Charge (Typ. 45 nC) stripe and DMOS technology. This advanced MOSFET • Low Crss . 14 pF) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and • 100% Avalanche Tested high avalanche energy strength. These devices are suitable for • RoHS compliant switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D TO-3PN S S Absolute Maximum Ratings Symbol Parameter FQA9N90C_F109 Unit V Drain-Source Voltage 900 V DSS I Drain Current - Continuous (T = 25°C) 9.0 A D C - Continuous (T = 100°C) 5.7 A C (Note 1) I Drain Current - Pulsed 36 A DM V Gate-Source Voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 900 mJ AS (Note 1) I Avalanche Current 9.0 A AR (Note 1) E Repetitive Avalanche Energy 28 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.0 V/ns P Power Dissipation (T = 25°C) 280 W D C - Derate above 25°C 2.22 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQA9N90C_F109 R Thermal Resistance, Junction-to-Case, Max. 0.45 °C/W θJC 0.24 R Thermal Resistance, Case-to-Sink, Typ. °C/W θCS R Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W θJA 1 ©2007 FQA9N90C_F109 Rev. C0
