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FQA8N100C
N-Channel QFET?MOSFET 1000V, 8.0A, 1.45?
FQA8N100C 1000V N-Channel MOSFET September 2005 ® QFET FQA8N100C 1000V N-Channel MOSFET Features Description 8A, 1000V, R = 1.45Ω @V = 10 V These N-Channel enhancement mode power field effect transis- DS(on) GS tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 53 nC) DMOS technology. Low C (typical 16 pF) rss This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutation mode. These devices are well suited for high effi- Improved dv/dt capability cient switched mode power supplies. D ! ! "" !!"" "" G ! ! "" TO-3PN ! ! S FQA Series GS D Absolute Maximum Ratings Symbol Parameter FQA8N100C Unit V Drain-Source Voltage 1000 V DSS I Drain Current - Continuous (T = 25°C) 8 A D C - Continuous (T = 100°C) 5 A C (Note 1) I Drain Current - Pulsed 32 A DM V Gate-Source voltage ±30 V GSS (Note 2) E Single Pulsed Avalanche Energy 850 mJ AS I Avalanche Current (Note 1) 8A AR E Repetitive Avalanche Energy (Note 1) 22.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25°C) 225 W D C - Derate above 25°C 1.79 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min. Max. Unit R Thermal Resistance, Junction-to-Case -- 0.56 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2005 1 FQA8N100C Rev. A
