FQA7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFQA7N90March 2001TMQFETFQA7N90900V N-Channel MOSFET
FQA7N90M ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7A, 900V, R = 1.8Ω @V = 10 VDS(on) GS ..
FQA8N100C ,N-Channel QFET?MOSFET 1000V, 8.0A, 1.45?Features Description 8A, 1000V, R = 1.45Ω @V = 10 V These N-Channel enhancement mode power field e ..
FQA8N80 ,800V N-Channel MOSFETFQA8N80March 2001TMQFETFQA8N80800V N-Channel MOSFET
G690H263T73 ,mode Technology Inc - Microprocessor Reset IC
G690L263T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
FQA7N90
900V N-Channel MOSFET
FQA7N90 March 2001 TM QFET FQA7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-3P !!!! !!!! G D S FQA Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA7N90 Units V Drain-Source Voltage 900 V DSS I - Continuous (T = 25°C) Drain Current 7.4 A D C - Continuous (T = 100°C) 4.7 A C I (Note 1) Drain Current - Pulsed 29.6 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 830 mJ AS I Avalanche Current (Note 1) 7.4 A AR E (Note 1) Repetitive Avalanche Energy 22 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25°C) 220 W D C - Derate above 25°C 1.75 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.57 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. A, March 2001
