FQA62N25C ,250V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 62A, 250V, R = 0.035Ω @V = 10 VDS(on) ..
FQA65N20 ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 65A, 200V, R = 0.032Ω @V = 10 VDS(on) ..
FQA65N20 ,200V N-Channel MOSFETFQA65N20August 2001TMQFETFQA65N20200V N-Channel MOSFET
FQA65N20 ,200V N-Channel MOSFETFQA65N20August 2001TMQFETFQA65N20200V N-Channel MOSFET
FQA65N20 ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 65A, 200V, R = 0.032Ω @V = 10 VDS(on) ..
FQA6N70 ,700V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.4A, 700V, R = 1.5 Ω @ V = 10 VDS(on ..
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FQA62N25C
250V N-Channel Advance Q-FET C-Series
FQA62N25C ® QFET FQA62N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 62A, 250V, R = 0.035Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 100 nC) planar, DMOS technology. • Low Crss ( typical 63.5 pF) This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D {{ ●● ◀◀ ▲▲ ●● G{{ ●● {{ TO-3P S FQA Series GS D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA62N25C Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 62 A D C - Continuous (T = 100°C) 39 A C I (Note 1) Drain Current - Pulsed 248 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 2300 mJ AS I Avalanche Current (Note 1) 62 A AR E (Note 1) Repetitive Avalanche Energy 29.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 298 W D C - Derate above 25°C 2.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.42 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2004 Rev. A, March 2004
