FQA55N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
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FQA55N10
100V N-Channel MOSFET
August 2000 TM QFET QFET QFET QFET FQA55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 61A, 100V, R = 0.026Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 75 nC) planar stripe, DMOS technology. • Low Crss ( typical 130 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" ! ! TO-3P G D S S FQA Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA55N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 61 A D C - Continuous (T = 100°C) 43.1 A C I (Note 1) Drain Current - Pulsed 244 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1100 mJ AS I Avalanche Current (Note 1) 61 A AR E (Note 1) Repetitive Avalanche Energy 19 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 190 W D C - Derate above 25°C 1.27 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.79 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, July 2000 FQA55N10
