FQA44N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQA44N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA55N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
G690H263T73 ,mode Technology Inc - Microprocessor Reset IC
G690L263T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
FQA44N08
80V N-Channel MOSFET
August 2000 TM QFET QFET QFET QFET FQA44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 49.8A, 80V, R = 0.034Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" ! ! TO-3P S G D S FQA Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA44N08 Units V Drain-Source Voltage 80 V DSS I - Continuous (T = 25°C) Drain Current 49.8 A D C - Continuous (T = 100°C) 35.2 A C I (Note 1) Drain Current - Pulsed 199.2 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 450 mJ AS I Avalanche Current (Note 1) 49.8 A AR E (Note 1) Repetitive Avalanche Energy 16.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns P Power Dissipation (T = 25°C) 163 W D C - Derate above 25°C 1.09 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.92 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQA44N08
