FQA36P15 ,150V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA44N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQA44N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
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FQA36P15
150V P-Channel QFET
FQA36P15 ® QFET FQA36P15 150V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -36A, -150V, R = 0.09Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 81 nC) planar stripe, DMOS technology. • Low Crss ( typical 110 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. S !!!!!!!! ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● TO-3P !!!!!!!! FQA Series GS D D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA36P15 Units V Drain-Source Voltage -150 V DSS I - Continuous (T = 25°C) Drain Current -36 A D C - Continuous (T = 100°C) -25.5 A C I (Note 1) Drain Current - Pulsed -144 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1400 mJ AS I Avalanche Current (Note 1) -36 A AR E (Note 1) Repetitive Avalanche Energy 29.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.0 V/ns P Power Dissipation (T = 25°C) 294 W D C - Derate above 25°C 1.96 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.51 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2003 Rev. B, December 2003