FQA33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
FQA34N20 ,200V N-Channel MOSFET
FQA34N20 ,200V N-Channel MOSFET
FQA34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 34A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FQA34N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 34A, 250V, R = 0.085Ω @V = 10 VDS(on) ..
FQA36P15 ,150V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
G690H263T73 ,mode Technology Inc - Microprocessor Reset IC
G690L263T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
FQA33N10L
100V LOGIC N-Channel MOSFET
September 2000 TM QFET QFET QFET QFET FQA33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 36A, 100V, R = 0.052Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175°C maximum junction temperature rating suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" TO-3P ! ! G D S S FQA Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA33N10L Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 36 A D C - Continuous (T = 100°C) 25.5 A C I (Note 1) Drain Current - Pulsed 144 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 430 mJ AS I Avalanche Current (Note 1) 36 A AR E (Note 1) Repetitive Avalanche Energy 16.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 163 W D C - Derate above 25°C 1.09 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.92 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, September 2000 FQA33N10L
