FQA32N20C ,200V N-Channel Advance Q-FET C-SeriesFQA32N20C®QFETFQA32N20C200V N-Channel MOSFET
FQA33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
FQA34N20 ,200V N-Channel MOSFET
FQA34N20 ,200V N-Channel MOSFET
FQA34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 34A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
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G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
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FQA32N20C
200V N-Channel Advance Q-FET C-Series
FQA32N20C ® QFET FQA32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 32A, 200V, R = 0.082Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 82.5 nC) planar, DMOS technology. • Low Crss ( typical 185 pF) This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D {{ ●● ◀◀ ▲▲ ●● G{{ ●● TO-3P {{ FQA Series S GS D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA32N20C Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 32 A D C - Continuous (T = 100°C) 20.4 A C I (Note 1) Drain Current - Pulsed 128 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 955 mJ AS I Avalanche Current (Note 1) 32 A AR E (Note 1) Repetitive Avalanche Energy 20.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 204 W D C - Derate above 25°C 1.63 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.61 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2004 Rev. A, March 2004
