FQA19N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 18.5A, 600V, R = 0.38 Ω @ V = 10 VDS( ..
FQA22N30 ,300V N-Channel MOSFET
FQA22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA24N50F ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 24A, 500V, R = 0.2Ω @V = 10 VDS(on) G ..
FQA24N50F ,500V N-Channel MOSFETFQA24N50FSeptember 2001TMFRFETFQA24N50F500V N-Channel MOSFET
FQA24N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 23.5A, 600V, R = 0.24 Ω @ V = 10 VDS( ..
G690H263T73 ,mode Technology Inc - Microprocessor Reset IC
G690L263T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
FQA19N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQA19N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18.5A, 600V, R = 0.38 Ω @ V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" ! ! TO-3P S G D S FQA Series Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQA19N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 18.5 A D C - Continuous (T = 100°C) 11.7 A C I (Note 1) Drain Current - Pulsed 74 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1150 mJ AS I Avalanche Current (Note 1) 18.5 A AR E (Note 1) Repetitive Avalanche Energy 30 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 � V ns P Power Dissipation (T = 25°C) 300 W D C - Derate above 25°C 2.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.42 °C�W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C�W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQA19N60
