FQA17P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA18N50V2 ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 20A, 500V, R = 0.265Ω @V = 10 VDS(on) ..
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FQA19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 21.8A, 200V, R = 0.17Ω @V = 10 VDS(on ..
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FQA19N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 18.5A, 600V, R = 0.38 Ω @ V = 10 VDS( ..
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FQA17P10
100V P-Channel MOSFET
FQA17P10 TM QFET FQA17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -18A, -100V, R = 0.19Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G TO-3P S FQA Series GS D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA17P10 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25°C) Drain Current -18 A D C - Continuous (T = 100°C) -12.7 A C I (Note 1) Drain Current - Pulsed -72 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 580 mJ AS I Avalanche Current (Note 1) -18 A AR E (Note 1) Repetitive Avalanche Energy 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P Power Dissipation (T = 25°C) 120 W D C - Derate above 25°C 0.8 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.25 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2002 Rev. B, August 2002
