FQA13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 VDS(on ..
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FQA13N80
800V N-Channel MOSFET
FQA13N80 March 2001 TM QFET FQA13N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 68 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D ! ! "" !!"" "" G! ! "" TO-3P ! ! G D S FQA Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA13N80 Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25°C) Drain Current 12.6 A D C - Continuous (T = 100°C) 8.0 A C I (Note 1) Drain Current - Pulsed 50.4 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1100 mJ AS I Avalanche Current (Note 1) 12.6 A AR E (Note 1) Repetitive Avalanche Energy 30 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25°C) 300 W D C - Derate above 25°C 2.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.42 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. A, March 2001
