FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?Features Description• 12.6 A, 800 V, R = 750 mΩ (Max.) @ V = 10 V This N-Channel enhancement mode p ..
FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?®FQA13N80_F109 N-Channel QFET MOSFETApril 2013FQA13N80_F109®N-Channel QFET MOSFET800 V, 12.6 A, 75 ..
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FQA13N80_F109
N-Channel QFET?MOSFET 800V, 12.6A, 750m?
® FQA13N80_F109 N-Channel QFET MOSFET April 2013 FQA13N80_F109 ® N-Channel QFET MOSFET 800 V, 12.6 A, 750 mΩ Features Description • 12.6 A, 800 V, R = 750 mΩ (Max.) @ V = 10 V This N-Channel enhancement mode power MOSFET is DS(on) GS ® I = 6.8 A produced using Fairchild Semiconductor ’s proprietary planar D stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 68 nC) technology has been especially tailored to reduce on-state • Low Crss (Typ. 30 pF) resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for • 100% Avalanche Tested switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G TO-3PN D S S Absolute Maximum Ratings Symbol Parameter FQA13N80_F109 Unit V Drain-Source Voltage 800 V DSS I Drain Current - Continuous (T = 25°C) 12.6 A D C - Continuous (T = 100°C) 8.0 A C (Note 1) I Drain Current - Pulsed 50.4 A DM V Gate-Source Voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1100 mJ AS (Note 1) I Avalanche Current 12.6 A AR (Note 1) E Repetitive Avalanche Energy 30 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.0 V/ns P Power Dissipation (T = 25°C) 300 W D C - Derate above 25°C 2.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Unit Symbol Parameter FQA13N80_F109 0.42 R Thermal Resistance, Junction-to-Case, Max. °C/W θJC 0.24 R Thermal Resistance, Case-to-Sink, Typ. °C/W θCS 40 R Thermal Resistance, Junction-to-Ambient, Max. °C/W θJA ©2007 1 FQA13N80_F109 Rev. C0
