FQA12N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.7 Ω @ V = 10 VDS(on) ..
FQA13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, R = 0.48Ω @V = 10 VDS(on ..
FQA13N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 15A, 480m?Features Description• 15 A, 500 V, R = 48 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode pow ..
FQA13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 VDS(on ..
FQA13N80 ,800V N-Channel MOSFETFQA13N80March 2001TMQFETFQA13N80800V N-Channel MOSFET
FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?Features Description• 12.6 A, 800 V, R = 750 mΩ (Max.) @ V = 10 V This N-Channel enhancement mode p ..
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FQA12N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQA12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12A, 600V, R = 0.7 Ω @ V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" TO-3P ! ! G D S S FQA Series Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQA12N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 12 A D C - Continuous (T = 100°C) 7.6 A C I (Note 1) Drain Current - Pulsed 48 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 790 mJ AS I Avalanche Current (Note 1) 12 A AR E (Note 1) Repetitive Avalanche Energy 24 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 � V ns P Power Dissipation (T = 25°C) 240 W D C - Derate above 25°C 1.92 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.52 °C�W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C�W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQA12N60
