FQA11N90C_F109 ,N-Channel QFET?MOSFET 900V, 11.0A, 1.1?Features• 11 A, 900 V, R = 1.1 Ω (Max.) @ V = 10 V, This N-Channel enhancement mode power MOSFET is ..
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FQA11N90C_F109
N-Channel QFET?MOSFET 900V, 11.0A, 1.1?
® FQA11N90C_F109 N-Channel QFET MOSFET April 2013 FQA11N90C_F109 ® N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ω Description Features • 11 A, 900 V, R = 1.1 Ω (Max.) @ V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS ® I = 5.5 A produced using Fairchild Semiconductor ’s proprietary planar D stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 60 nC) technology has been especially tailored to reduce on-state • Low Crss (Typ. 23 pF) resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for • 100% Avalanche Tested switched mode power supplies, active power factor correction • RoHS Compliant (PFC), and electronic lamp ballasts. D G G D TO-3PN S S Absolute Maximum Ratings Symbol Parameter FQA11N90C_F109 Unit V Drain-Source Voltage 900 V DSS I Drain Current - Continuous (T = 25°C) 11.0 A D C - Continuous (T = 100°C) 6.9 A C (Note 1) I Drain Current - Pulsed 44.0 A DM V Gate-Source Voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 960 mJ AS (Note 1) I Avalanche Current 11.0 A AR (Note 1) E Repetitive Avalanche Energy 30 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.0 V/ns P Power Dissipation (T = 25°C) 300 W D C - Derate above 25°C 2.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics FQA11N90C_F109 Symbol Parameter Unit 0.42 R Thermal Resistance, Junction-to-Case, Max. °C/W θJC 0.24 R Thermal Resistance, Case-to-Sink, Typ. °C/W θCS 40 R Thermal Resistance, Junction-to-Ambient, Max. °C/W θJA 1 ©2007 FQA11N90C_F109 Rev. C0
