FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
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FQA10N60C
600V N-Channel Advance Q-FET C-Series
FQA10N60C TM QFET FQA10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-3P !!!! FQA Series !!!! GS D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA10N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 10 A D C - Continuous (T = 100°C) 6A C I (Note 1) Drain Current - Pulsed 40 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 700 mJ AS I Avalanche Current (Note 1) 10 A AR E (Note 1) Repetitive Avalanche Energy 19.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 192 W D C - Derate above 25°C 1.53 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.65 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2003 Rev. A, October 2003
