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FPN660A
PNP Low Saturation Transistor
FPN660/FPN660A FPN660/FPN660A PNP Low Saturation Transistor • These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. • Sourced from process PA. C TO-226 B E Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter FPN660 FPN660A Units V Collector-Emitter Voltage 60 60 V CEO V Collector-Base Voltage 80 60 V CBO V Emitter-Base Voltage 5 5 V EBO I Collector Current - Continuous 3 3 A C T , T Operating and Storage Junction Temperature Range -55 ~ +150 -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltage (V) and currents (A) are negative polarity for PNP transistors Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = 10mA, I = 0 55 V CEO C B BV Collector-Base Breakdown Voltage I = 100μA, I = 0 FPN660 80 V CBO E E FPN660A 60 V BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 5.0 V EBO E C I Collector-Base Cutoff Current V = 30V, I = 0 100 nA CBO CB E V = 30V, I = 0, T = 100°C 10 μA CB E A I Emitter-Base Cutoff Current V = 4.0V, I = 0 100 nA EBO EB C On Characteristics * h DC Current Gain I = 100mA, V = 2.0V 70 FE C CE I = 500mA, V = 2.0V FPN660 100 300 C CE FPN660A 250 550 I = 1.0A, V = 2.0V 80 C CE I = 2.0A, V = 2.0V 40 C CE V (sat) Collector-Emitter Saturation Voltage I = 1.0A, I = 100mA 300 mV CE C B I = 2.0A, I = 200mA FPN660 450 mV C B FPN660A 400 mV V (sat) Base-Emitter Saturation Voltage I = 1.0A, I = 100mA 1.25 V BE C B V (on) Base-Emitter On Voltage I = 1.0A, V = 2.0V 1.0 V BE C CE Small Signal Characteristics C Output Capacitance V = 10V, I = 0, f = 1MHz 45 pF obo CB E f Transition Frequency I = 100mA, V = 5.0V, 75 MHz T C CE f = 100MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% NOTE: All voltage (V) and currents (A) are negative polarity for PNP transistors. ©2002 Rev. A1, June 2002
