FPN560A ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
FPN660 ,PNP Low Saturation TransistorFPN660/FPN660AFPN660/FPN660APNP Low Saturation Transistor• These devices are designed for high curr ..
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FPNH10 ,NPN RF TransistorFPNH10FPNH10C TO-92BENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifie ..
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G5SBA60 ,Glass Passivated Single-Phase Bridge Rectifier, Forward Current 4.0 AThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
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FPN560A
NPN Low Saturation Transistor
FPN560 / FPN560A FPN560 FPN560A TO-226 C B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO VCBO Collector-Base Voltage 80 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 3.0 A C Operating and Storage Junction Temperature Range -55 to +150 C TJ, Tstg ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FPN560 / FPN560A P Total Device Dissipation 1.0 W D R Thermal Resistance, Junction to Case 50 θJC °C/W R Thermal Resistance, Junction to Ambient 125 °C/W θJA 1999
