FPN530A ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560 ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
FPN660 ,PNP Low Saturation TransistorFPN660/FPN660AFPN660/FPN660APNP Low Saturation Transistor• These devices are designed for high curr ..
FPN660A ,PNP Low Saturation Transistorapplications involving pulsed or low duty cycle operations.3) All voltage (V) and currents (A) are ..
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G5SBA60 ,Glass Passivated Single-Phase Bridge Rectifier, Forward Current 4.0 AThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
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FPN530A
NPN Low Saturation Transistor
FPN530 / FPN530A FPN530 FPN530A TO-226 C B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 60 V CBO VEBO Emitter-Base Voltage 5.0 V I Collector Current - Continuous 3.0 A C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FPN530 / FPN530A P Total Device Dissipation 1.0 W D Thermal Resistance, Junction to Case 50 R °C/W θJC Thermal Resistance, Junction to Ambient 125 RθJA °C/W 1999
