FPN330A ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530 ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530A ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560 ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
G5SBA60 ,Glass Passivated Single-Phase Bridge Rectifier, Forward Current 4.0 A21-Feb-03 1G3SBA20 and G3SBA80Vishay Semiconductorsformerly General SemiconductorRatings and Charac ..
G5SBA60 ,Glass Passivated Single-Phase Bridge Rectifier, Forward Current 4.0 AFeatures0.140 (3.56)0.880 (22.3) • Plastic package has Underwriters Laboratory0.130 (3.30)0.860 (21 ..
G5SBA60 ,Glass Passivated Single-Phase Bridge Rectifier, Forward Current 4.0 AThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
G5V-2 , Miniature Relay for Signal Circuits
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G690H263T73 ,mode Technology Inc - Microprocessor Reset IC
FPN330A
NPN Low Saturation Transistor
FPN330 / FPN330A FPN330 FPN330A TO-226 C B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 50 V CBO VEBO Emitter-Base Voltage 5.0 V I Collector Current - Continuous 3.0 A C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FPN330 / FPN330A P Total Device Dissipation 1.0 W D R Thermal Resistance, Junction to Case 50 °C/W θJC Thermal Resistance, Junction to Ambient 125 R °C/W θJA 1999
