FN1L3Z-T1B ,Compound transistorDATA SHEET
SILICON TRANSISTOR
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
..
FN1L3Z-T2B ,Compound transistorFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4M-T1B ,Compound transistorFEATURES
PAcKA.GE..PMFNsiONs . Resistors Built-in TYPE
In millimeters
C
28:02 B
FO.1 R1 1T2 47 ..
G2SB60 ,BRIDGE RECTIFIERSFeaturesChamfer• Plastic package has Underwriters LaboratoryFlammability Classification 94V-00.421 ..
G2SBA60 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 VFeatures• Plastic package has Underwriters Laboratory0.421 (10.7)Flammability Classification 94V-00 ..
G2SBA80 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 V21-Mar-02 1G2SBA20 thru G2SBA80Vishay Semiconductorsformerly General SemiconductorRatings and Chara ..
G2SBA80 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 VThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
G3D ,GLASS PASSIVATED JUNCTION RECTIFIER Document Number 860862 Rev. 2, 28-Jan-03G3A to G3MVISHAYVishay SemiconductorsTypical Characteristi ..
G3K ,GLASS PASSIVATED JUNCTION RECTIFIER Document Number 860864 Rev. 2, 28-Jan-03G3A to G3MVISHAYVishay SemiconductorsOzone Depleting Subst ..
FN1L3Z-T1B-FN1L3Z-T2B
