FN1F4N-T2B ,Compound transistorFEATURES
0 Resistors Built-in TYPE
RI=22k?
R2 =47 kf2
R2 E
o Complementary to FA1F4N
..
FN1F4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
- J, CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS _
..
FN1L3M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3M-T1B ,Compound transistorNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3N-T1B ,Compound transistorDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
G2SB60 ,BRIDGE RECTIFIERSFeaturesChamfer• Plastic package has Underwriters LaboratoryFlammability Classification 94V-00.421 ..
G2SBA60 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 VFeatures• Plastic package has Underwriters Laboratory0.421 (10.7)Flammability Classification 94V-00 ..
G2SBA80 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 V21-Mar-02 1G2SBA20 thru G2SBA80Vishay Semiconductorsformerly General SemiconductorRatings and Chara ..
G2SBA80 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 VThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
G3D ,GLASS PASSIVATED JUNCTION RECTIFIER Document Number 860862 Rev. 2, 28-Jan-03G3A to G3MVISHAYVishay SemiconductorsTypical Characteristi ..
G3K ,GLASS PASSIVATED JUNCTION RECTIFIER Document Number 860864 Rev. 2, 28-Jan-03G3A to G3MVISHAYVishay SemiconductorsOzone Depleting Subst ..
FN1F4N-T1B-FN1F4N-T2B
