FN1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T2B ,Compound transistorFEATURES
PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE
in millimeters _ C
2.8k0.2 B
l, _ . ..
FN1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) N
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Colle ..
FN1A4P-T1B ,Compound transistorFEATURES
PAcKAfE.PPiiNsioNs __' o Resistors Built-in TYPE
m millimeters
c
2.8K0.2 2 f B -
0. ..
FN1A4P-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) N
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Colle ..
G2SB60 ,BRIDGE RECTIFIERSFeaturesChamfer• Plastic package has Underwriters LaboratoryFlammability Classification 94V-00.421 ..
G2SBA60 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 VFeatures• Plastic package has Underwriters Laboratory0.421 (10.7)Flammability Classification 94V-00 ..
G2SBA80 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 V21-Mar-02 1G2SBA20 thru G2SBA80Vishay Semiconductorsformerly General SemiconductorRatings and Chara ..
G2SBA80 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 VThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
G3D ,GLASS PASSIVATED JUNCTION RECTIFIER Document Number 860862 Rev. 2, 28-Jan-03G3A to G3MVISHAYVishay SemiconductorsTypical Characteristi ..
G3K ,GLASS PASSIVATED JUNCTION RECTIFIER Document Number 860864 Rev. 2, 28-Jan-03G3A to G3MVISHAYVishay SemiconductorsOzone Depleting Subst ..
FN1A4M
