FMC7G50US60 ,IGBTElectrical Characteristics of the IGBT @ Inverter & Brake T = 25°C unless otherwise notedCSymbol P ..
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FMC7G50US60
IGBT
FMC7G50US60 October 2001 IGBT FMC7G50US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • UL Certified No. E209204 • Short circuit rated 10us @ T = 100°C, V = 15V C GE • High speed switching Package Code : 21PM-BA • Low saturation voltage : V (sat) = 2.2 V @ I = 50A CE C • High input impedance P P1 • Built in brake and 3 phase rectifier circuit • Fast & soft anti-parallel FWD GU GV GW R B EU EV EW Applications S U V W T • AC & DC motor controls GB • General purpose inverters N -GU -GV -GW E • Robotics • Servo controls Internal Circuit Diagram Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description FMC7G50US60 Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES I Collector Current @ T = 25°C50 A C C Inverter I Pulsed Collector Current 100 A CM (1) & I Diode Continuous Forward Current @ T = 100°C50 A F C Brake I Diode Maximum Forward Current 100 A FM P Maximum Power Dissipation @ T = 25°C 200 W D C T Short Circuit Withstand Time @ T = 100°C10 us SC C V Repetitive Peak Reverse Voltage 1200 V RRM I Average Output Rectified Current 50 A O Surge Forward Current Converter I 500 A FSM @ 1Cycle at 60Hz, Peak value Non-Repetitive 2 2 1 Cycle Surge Current 1025 A s I t T Operating Junction Temperature -40 to +150 °C J T Common Storage Temperature Range -40 to +125 °C STG V Isolation Voltage @ AC 1minute 2500 V ISO Mounting Torque Mounting part Screw @ M4 1.25 N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 FMC7G50US60 Rev. A3
