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FMBA14
NPN Multi-Chip Darlington Transistor
FMBA14 FMBA14 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1N Dot denotes pin #1 NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CES V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 10 V EBO 4 I Collector Current - Continuous 1.2 A C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units FMBA14 P Total Device Dissipation 700 mW D 5.6 Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient 180 R °C/W θJA 1998
