FMB2907A ,PNP Multi-Chip General Purpose AmplifierFFB2907A / FMB2907A / MMPQ2907AFMB2907AFFB2907A MMPQ2907AE2C2 B4E4B2E1 B3E3C1B2C1E2B1E1C4C2 C4B2C3S ..
FMB-29L , Silicon Schottky Barrier Diode
FMB-29L , Silicon Schottky Barrier Diode
FMB-34 , Schottky Barrier Diodes 40V
FMB-34M , Schottky Barrier Diodes 40V
FMB-34S , Schottky Barrier Diodes 40V
FXL2SD106BQX , Low Voltage Dual Supply 6-Bit SD Interface Voltage Translator with Configurable Voltage Supplies
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FMB2907A
PNP Multi-Chip General Purpose Amplifier
FFB2907A / FMB2907A / MMPQ2907A FMB2907A FFB2907A MMPQ2907A E2 C2 B4 E4 B2 E1 B3 E3 C1 B2 C1 E2 B1 E1 C4 C2 C4 B2 C3 SC70-6 B1 E2 C3 Mark: .2F pin #1 E1 C2 B1 pin #1 C2 SOIC-16 C1 NOTE: The pinouts are symmetrical; pin 1 and pin C1 SuperSOT-6 Mark: pin #1 4 are interchangeable. Units inside the carrier can Mark: .2F MMPQ2907A be of either orientation and will not affect the Dot denotes pin #1 functionality of the device. PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 5.0 V EBO 4 I Collector Current - Continuous 600 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units FFB2907A FMB2907A MMPQ2907A P Total Device Dissipation 300 700 1,000 mW D Derate above 25°C 2.4 5.6 8.0 mW/°C Thermal Resistance, Junction to Ambient 415 180 R °C/W θJA Effective 4 Die 125 °C/W Each Die 240 C/W ° 1998
