FMB2227A ,NPN & PNP General Purpose AmplifierFFB2227A / FMB2227AFFB2227A FMB2227AE2C2B2TRANSISTOR TYPEE1C1C1 B1 E1 NPNC1C2 B2 E ..
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FMB-24H , Schottky Barrier Diodes 40V
FMB-24H , Schottky Barrier Diodes 40V
FMB-24M , Schottky Barrier Diodes 40V
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FX828D5 , CTCSS/DCS/SELCALL Processor
FX829D5 , Baseband Signal Processor
FX8-80P-SV , 0.6mm Pitch Stacking Height 3mm to 16mm Connector
FX8-80S-SV , 0.6mm Pitch Stacking Height 3mm to 16mm Connector
FMB2227A
NPN & PNP General Purpose Amplifier
FFB2227A / FMB2227A FFB2227A FMB2227A E2 C2 B2 TRANSISTOR TYPE E1 C1 C1 B1 E1 NPN C1 C2 B2 E2 PNP C2 SC70-6 B2 B1 Mark: .AA pin #1 E1 E2 SuperSOT-6 Dot denotes pin #1 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO VCBO Collector-Base Voltage 60 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C 4 Operating and Storage Junction Temperature Range -55 to +150 °C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units FFB2227A FMB2227A P Total Device Dissipation 300 700 mW D 2.4 5.6 Derate above 25°C mW/°C R Thermal Resistance, Junction to Ambient 415 180 °C/W θJA 1998