FLL177ME ,L-BAND MEDIUM & HIGH POWER GAAS FETFEATURES
. High Output Power: P1dB=32.5dBm (Typ.)
. High Gain: G1dB=12.5dB (Typ.)
. High PAE ..
FLL177ME ,L-BAND MEDIUM & HIGH POWER GAAS FETapplications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu's stringent ..
FLL351ME ,L-band medium & high power gaas FTEsapplications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu's stringent Q ..
FLL400IP-2 , L-Band Medium & High Power GaAs FET
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FLL177ME
