FKPF3N80TU ,Bi-Directional Triode Thyristor Planar SiliconFKPF3N80FKPF3N80Application Explanation Switching mode power supply, light dimmer, electric flashe ..
FKPF5N80 ,Bi-Directional Triode Thyristor Planar SiliconFKPF5N80FKPF5N80Application Explanation Switching mode power supply, light dimmer, electric flashe ..
FKPF5N80TU ,Bi-Directional Triode Thyristor Planar SiliconFKPF5N80FKPF5N80Application Explanation Switching mode power supply, light dimmer, electric flashe ..
FKPF5N80TU ,Bi-Directional Triode Thyristor Planar SiliconFKPF5N80FKPF5N80Application Explanation Switching mode power supply, light dimmer, electric flashe ..
FKV660 , MOSFET
FKV660S , MOSFET
FSU10B60 , FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION
FSU20B60 , FRD - For Power Factor Improvement High Frequency Rectification
FSU20B60 , FRD - For Power Factor Improvement High Frequency Rectification
FSUSB104UMX , Low-Power, Two-Port, Hi-Speed, USB2.0 (480Mbps) Switch
FSUSB11L10X ,Low Power High Bandwidth USB Switch Dual SPDT Multiplexer/Demultiplexerfeatures ultra low R of 1.3Ω maximumON
FKPF3N80-FKPF3N80TU
Bi-Directional Triode Thyristor Planar Silicon
FKPF3N80 FKPF3N80 Application Explanation Switching mode power supply, light dimmer, electric flasher unit TV sets, stereo, refrigerator, washing machine, bread maker Electric blanket, solenoid driver, small motor control Photo copier, electric tool 2 1: T 1 2: T 2 3: Gate 3 TO-220F 1 1 2 3 Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Rating Units (Note1 ) V Repetitive Peak Off-State Voltage 800 V DRM Symbol Parameter Conditions Rating Units I RMS On-State Current Commercial frequency, sine full wave 360° 3A T (RMS) conduction, T =110°C C I Surge On-State Current Sinewave 1 full cycle, peak value, 50Hz 30 A TSM non-repetitive 60Hz 33 A 2 2 2 I t I t for Fusing Value corresponding to 1 cycle of halfwave, 4.5 A s surge on-state current, tp=10ms di/dt Critical Rate of Rise of On-State Current I = 2x I , tr ≤ 100ns 50 A/μs G GT P Peak Gate Power Dissipation 5 W GM P Average Gate Power Dissipation 0.5 W G (AV) V Peak Gate Voltage 10 V GM I Peak Gate Current 2A GM T Junction Temperature - 40 ~ 125 °C J T Storage Temperature - 40 ~ 125 °C STG V Isolation Voltage Ta=25°C, AC 1 minute, T T G terminal to 1500 V iso 1 2 case Thermal Characteristic Symbol Parameter Test Condition Min. Typ. Max. Units (Note 4) R Thermal Resistance Junction to case -- 4.3 °C/W th(J-C) ©2004 Rev. A, April 2004
